| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent excessive stress from being applied to an active layer for a subsequent oxide process and to prevent the characteristic of a device including a gate oxide layer formed in the active layer from being deteriorated, by performing nitridization by a selective epitaxial growth(SEG) process after an isolation process is carried out. CONSTITUTION: An oxide layer(3) is so formed on a silicon substrate(1) having an active region and an isolation region that the active region is exposed. A silicon epi-layer having the same thickness as the oxide layer is formed on the active region of the exposed silicon substrate by an SEG process so that the active layer(10) composed of the silicon epi-layer and an isolation layer(11) composed of an oxide layer are formed. The resultant structure is nitridized. The nitridized active layer is oxidized to form a sacrificial oxide layer(12) on the active layer. The sacrificial oxide layer is eliminated.
|
