METHOD FOR EVALUATING FACE ORIENTATION DEPENDENCE OF SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: To provide a method for precisely and easily evaluating not less than one type of face orientation dependence, especially face orientation dependence in the formation of a thermally oxidized film. CONSTITUTION: The hard mask of a circular dot pattern is formed on a silicon substrate (100), and a circular silicon pillar is formed by reactive ion etching. When etching quantity is less, the silicon pillar becomes columnar along the shape of the hard mask, but the (100) face appears and becomes prismatic in a lower part as etching quantity increases. The prismatic silicon pillar where the (100) face appears is used for the evaluation of a plane direction.