MINIMUM CHANNEL MEMORY DEVICE AND DRIVING METHOD THEREOF

摘要

PURPOSE: A minimum channel memory device is provided to use a minimum channel device as a memory device by forming a side gate of relatively small work function on the side surface of a main gate and by performing a memory operation while using an inversion layer and the side gate formed on the side gate. CONSTITUTION: An oxide layer(24) is formed on a semiconductor substrate(30). The main gate(21) is formed on the oxide layer. An insulation layer(25) surrounds the right and left side surfaces of the main gate. The first and second gates(22,23) have work function different than that of the main gate, respectively formed on the right and left side surfaces of the main gate while the insulation layer is used as a medium. A source/drain is formed in the substrate under the first and second gates. The inversion layer(26,27) is formed in the substrate under the first and second gates, adjacent to the source/drain.