| 摘要 |
PURPOSE: A fabrication method of dual damascene wiring is provided to easily achieve fine patterns and to easily control the size of a via hole or a trench by using a plurality of metal hard mask having different etching selectivity. CONSTITUTION: A diffusion barrier layer(34), an interlayer dielectric(35), a first metal hard mask(36) are sequentially formed on a semiconductor substrate(31) having a lower metal wiring(33). A desired portion of the first metal hard mask is partially etched to form a trench pattern by using a first photoresist pattern. A second metal hard mask having different etching selectivity is formed on the etched region of the first metal hard mask. A via hole pattern is formed by selectively etching the first metal hard mask using a second photoresist pattern. The interlayer dielectric is partially etched to form a via hole pattern by using the first metal hard mask. After removing the exposed first metal hard mask, a trench and a via hole are formed by selectively etching the interlayer dielectric using the second metal hard mask.
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