| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device using electrochemical etching is provided to acquire a capacitor with high-capacitance and reliance of the fabrication process even though the area of a capacitor electrode is reduced and aspect ratio increases. CONSTITUTION: Gate electrodes(13) and a transistor, including source/drain region(14) are formed on a silicon substrate(11). An interlayer dielectrics(15) is formed on the whole surface of the substrate to cover the transistor. A contact hole is made to expose source/drain region by selectively etching a portion of the interlayer dielectrics and a plug(16) for the capacitor is formed by filling up the hole with poly silicon. Single crystal silicon is grown up to the predetermined thickness on the plug for the capacitor and the interlayer dielectrics by selective epitaxial growth. Many holes, with diameter between a few and a thousand nm, are made by electrochemical etching. A storage node(20) with many holes is formed by etching single crystal layer through mask process. A dielectric layer(21) and a plate node(22) are formed on the storage node in succession.
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