| 摘要 |
PURPOSE: An apparatuses and methods for heat treatment of semiconductor films upon thermally susceptible non-conducting substrates is provided to anneal the semiconductor film in a short interval of time at a temperature at which the non-conductive substrate is not damaged or transformed. CONSTITUTION: An inductive coil is so positioned to apply induced current in a direction parallel with the plane of the semiconductor film, installed near the semiconductor film. A magnetic core is installed inside or outside the inductive coil. A heating plate heats the semiconductor film so that the semiconductor film is inductively heated, installed under the non-conductive substrate.
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