| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to increase an operating speed by decreasing capacitance caused by a void inside a plasma enhanced tetra-ethyl-ortho-silicate(PETEOS) oxide layer, and to reduce stress of a passivation layer by making a thin silicon nitride layer. CONSTITUTION: An underlying insulation layer(51) is formed on a semiconductor substrate having a predetermined structure. A metal interconnection(53) is formed on the underlying insulation layer. The PETEOS oxide layer(55) as a lower passivation layer is formed on the entire surface, wherein the PETEOS oxide layer has a thickness larger than that of the metal interconnection to form a void(59) inside the PETEOS oxide layer. A silicon nitride layer(57) as an upper passivation layer is formed on the PETEOS oxide layer.
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