| 摘要 |
<p>A method for preparing a GaN based compound semiconductor crystal wherein a GaN based compound semiconductor crystal is grown on the surface of a substrate to provide the GaN based compound semiconductor crystal as a single material, which comprises subjecting the semiconductor crystal grown on a substrate to a heat treatment while supplying a gas capable of decomposing through reducing the substrate to the back surface of the substrate, to thereby remove the substrate prior to a cooling step. The method allows the prevention of the occurrence of a crack, warpage or a fracture in a GaN based compound semiconductor crystal due to a strain of the crystal in the cooling step.</p> |
