发明名称 MICROWAVE PLASMA PROCESSING DEVICE, PLASMA PROCESSING METHOD, AND MICROWAVE RADIATING MEMBER
摘要 <p>Installed in a processing vessel (22) is a mounting block (24) on which a semiconductor wafer (W) is mounted. Microwaves, which are generated by a microwave generator (76), are introduced into a processing vessel (22) through a planar antenna member (66). The planar antenna member (66) has a plurality of slits (84) arranged along a plurality of circumferences, the circumferences forming non-concentric circles. The plasma density distribution in the radial direction of the planar antenna member (66) becomes uniform.</p>
申请公布号 WO2003001578(P1) 申请公布日期 2003.01.03
申请号 JP2002006110 申请日期 2002.06.19
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