发明名称 |
SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD |
摘要 |
A structure, in which a second treating unit group that performs, under vacuum or pressure, e.g., an electron beam or ultraviolet ray irradiation, a CVD or a cleaning treatment is provided integrally with a first treating unit group that forms an interlayer insulation film under a normal pressure, can shorten a treating time especially in a damascene process to decrease foot print per treating power. A treating time thus shortened can prevent an insulating film from absorbing moisture in the air that causes deterioration in film quality, and contribute to forming a quality insulation film even if a porous film, for example, is used as an insulation film.
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申请公布号 |
WO03001579(A1) |
申请公布日期 |
2003.01.03 |
申请号 |
WO2002JP06297 |
申请日期 |
2002.06.24 |
申请人 |
TOKYO ELECTRON LIMITED;ISHIDA, HIROSHI |
发明人 |
ISHIDA, HIROSHI |
分类号 |
H01L21/00;H01L21/768;(IPC1-7):H01L21/31;H01L21/68 |
主分类号 |
H01L21/00 |
代理机构 |
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