发明名称 SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD
摘要 A structure, in which a second treating unit group that performs, under vacuum or pressure, e.g., an electron beam or ultraviolet ray irradiation, a CVD or a cleaning treatment is provided integrally with a first treating unit group that forms an interlayer insulation film under a normal pressure, can shorten a treating time especially in a damascene process to decrease foot print per treating power. A treating time thus shortened can prevent an insulating film from absorbing moisture in the air that causes deterioration in film quality, and contribute to forming a quality insulation film even if a porous film, for example, is used as an insulation film.
申请公布号 WO03001579(A1) 申请公布日期 2003.01.03
申请号 WO2002JP06297 申请日期 2002.06.24
申请人 TOKYO ELECTRON LIMITED;ISHIDA, HIROSHI 发明人 ISHIDA, HIROSHI
分类号 H01L21/00;H01L21/768;(IPC1-7):H01L21/31;H01L21/68 主分类号 H01L21/00
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