发明名称 |
SILICON NANOPARTICLE ELECTRONIC SWITCHES |
摘要 |
An electronic fast switch for operation at room temperature utilizing unifor m silicon nanoparticles (.sim.1 nm with about 1 part per thousand exceeding 1 nm) between two conducting electrodes (10,18). The silicon nanoparticles, wh en on an n-type silicon substrate exhibit, at zero bias, a large differential conductance, approaching near full transparency. The conductance is observed after one of the electrode is first biased at a voltage in the range 3 to 5 eV (switching voltage), otherwise the device does not conduct (closed). A practical MOSFET switch of the invention includes the silicon nanoparticles (16) in a body of the MOSFET, with the gate (24) and substrate (22) forming the two conducting electrodes. Electrodes may be realized by metal in other switches of the invention.
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申请公布号 |
CA2432334(A1) |
申请公布日期 |
2003.01.03 |
申请号 |
CA20022432334 |
申请日期 |
2002.02.08 |
申请人 |
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS |
发明人 |
NAYFEH, MUNIR H.;THERRIEN, JOEL;SMITH, ADAM D. |
分类号 |
H01L21/335;H01L29/76;(IPC1-7):H03K17/51;B82B1/00 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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