| 摘要 |
<p>Apparatus (Figure 1) for retaining a workpiece in a semiconductor processing chamber (100) and method for fabricating the same. In one embodiment, a method for fabricating the apparatus includes providing a controlled resistivity boron nitride (CRBN) plate. A conductive layer is disposed on a portion of a lower surface of the CRBN plate to form at least one chucking electrode (116). A layer of boron nitride powder is disposed on the conductive layer and the lower surface of the CRBN plate. The CRBN plate, the conductive layer, and the boron nitride powder are hot pressed together to form the apparatus. In a second embodiment, a conductive electrode layer is deposited on a portion of a lower surface of the CRBN plate. A layer of pyrolytic boron nitride is deposited on the conductive layer and the lower surface of the CRBN plate to form the apparatus.</p> |
