发明名称 GAS JET DEPOSITION APPARATUS
摘要 A gas jet deposition method and apparatus includes a plurality of ports (132) to supply plasma to the substrate on which deposition is to occur. A reagent gas is introduced either into the ports or into the expansion chamber (120). The use of multiple ports results in a much more uniform deposition of material on the substrate. In preferred embodiments, a carrier gas plasma is created using an excitation source such as a microwave power supply.
申请公布号 WO03000952(A1) 申请公布日期 2003.01.03
申请号 WO2002US19688 申请日期 2002.06.21
申请人 APPLIED MATERIALS, INC. 发明人 MAJEWSKI, ROBERT, B.;DUBOUST, ALAIN;CHEN, GANG;LI, SEAN;JALLEPALLY, RAVI;CHEN, LIANG-YUH;CARL, DANIEL
分类号 C23C16/452;H01J37/32;(IPC1-7):C23C16/452 主分类号 C23C16/452
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