A gas jet deposition method and apparatus includes a plurality of ports (132) to supply plasma to the substrate on which deposition is to occur. A reagent gas is introduced either into the ports or into the expansion chamber (120). The use of multiple ports results in a much more uniform deposition of material on the substrate. In preferred embodiments, a carrier gas plasma is created using an excitation source such as a microwave power supply.
申请公布号
WO03000952(A1)
申请公布日期
2003.01.03
申请号
WO2002US19688
申请日期
2002.06.21
申请人
APPLIED MATERIALS, INC.
发明人
MAJEWSKI, ROBERT, B.;DUBOUST, ALAIN;CHEN, GANG;LI, SEAN;JALLEPALLY, RAVI;CHEN, LIANG-YUH;CARL, DANIEL