发明名称 |
Method of fabricating semiconductor device |
摘要 |
After successively depositing a first metal film and a first silicon oxide film on an insulating film formed on a semiconductor substrate, etching is carried out by using a first resist pattern as a mask, so as to form a first interlayer insulating film having openings from the first silicon oxide film and first metal interconnects from the first metal film. A third interlayer insulating film of an organic film is filled in the openings of the first interlayer insulating film, and the first interlayer insulating film is etched by using a hard mask. A second metal film is then filled in a space in the second interlayer insulating film, so as to form second metal interconnects.
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申请公布号 |
US2003003741(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20020222855 |
申请日期 |
2002.08.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
UEDA TETSUYA;TAMAOKA EIJI;AOI NOBUO |
分类号 |
H01L21/768;H01L21/302;H01L21/311;H01L21/461;H01L21/60;H01L23/522;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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