发明名称 Method of forming copper oxide film, method of etching copper film, method of fabricating semiconductor device, semiconductor manufacturing apparatus, and semiconductor device
摘要 A method of forming a copper oxide film comprises the step of forming a copper oxide film including an ammonia complex by causing a mixed solution of aqueous ammonia and aqueous hydrogen peroxide, which has been adjusted to have pH of 8 to 10 or pH of 9 to 10, to contact a surface of a copper film. A method of etching a copper film comprises the steps of forming a copper oxide film including an ammonia complex on a surface of the copper film by using the copper oxide film forming method as recited in any one of claims 1 to 3, and removing the copper oxide film from the copper film using acid or alkali. A method of fabricating a semiconductor device comprises the steps of burying a copper film to be a wiring or a contact wiring in a wiring groove or a contact hole formed in a surface of an insulating film formed on a semiconductor substrate, or in both the wiring groove and the contact hole, forming a copper oxide film including an ammonia complex on a surface of the copper film by using the copper oxide film forming method, and removing the copper oxide film from the copper film using acid or alkali.
申请公布号 US2003001271(A1) 申请公布日期 2003.01.02
申请号 US20020233582 申请日期 2002.09.04
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 UOZUMI YOSHIHIRO
分类号 H01L21/308;C23C22/63;H01L21/28;H01L21/288;H01L21/3205;H01L21/768;(IPC1-7):H01L21/476;H01L23/52;H01L29/40 主分类号 H01L21/308
代理机构 代理人
主权项
地址