发明名称 Verfahren zum Herstellen eines Speicherbauelements
摘要 The invention relates to a method for producing a memory component comprising a memory location (104) having memory cells and first control electrode strips (162) for controlling the individual memory cells, and a peripheral area (106) having peripheral elements and second control electrode strips (164) for controlling said peripheral elements. The inventive method enables the expansion of the second control electrode strips (164) in the peripheral area (106) to be approximately randomly adjusted to minimum line widths, without influencing or changing the expansion of the first control electrode strips (162) in the memory location (104).
申请公布号 DE10128933(A1) 申请公布日期 2003.01.02
申请号 DE20011028933 申请日期 2001.06.18
申请人 INFINEON TECHNOLOGIES AG 发明人 TOEBBEN, DIRK
分类号 H01L21/336;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824 主分类号 H01L21/336
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