发明名称 On-die de-coupling capacitor using bumps or bars and method of making same
摘要 A method of fabricating an on-chip decoupling capacitor which helps prevent L di/dt voltage droop on the power grid for high surge current conditions is disclosed. Inclusion of the decoupling capacitor on die directly between the power grid greatly reduces the inductance L, and provides decoupling to reduce the highest possible frequency noise. This invention specifically describes the process flow in which the decoupling capacitor is located between the top layer metallization and the standard bump contacts which have either multiple openings or bar geometries to provide both power grid and top decoupling capacitor electrode contacts,
申请公布号 US2003001284(A1) 申请公布日期 2003.01.02
申请号 US20010895362 申请日期 2001.06.29
申请人 LIST RICHARD SCOTT;BLOCK BRUCE A.;BOHR MARK T. 发明人 LIST RICHARD SCOTT;BLOCK BRUCE A.;BOHR MARK T.
分类号 H01L21/02;H01L21/60;H01L23/522;H01L27/08;(IPC1-7):H01L29/40;H01L21/20;H01L21/44 主分类号 H01L21/02
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