Method for evaluating dependence of properties of semiconductor substrate on plane orientation and semiconductor device using the same
摘要
<p>A method for evaluating a plane orientation dependence of a semiconductor substrate comprises: forming a hard mask on a semiconductor substrate having plane orientation (100); anisotropically etching the semiconductor substrate with use of the hard mask as a mask to obtain a surface oriented in a specific crystal orientation; and evaluating a plane orientation dependence of the semiconductor substrate by use of at least a portion of the surface oriented in a specific crystal orientation. <IMAGE> <IMAGE> <IMAGE></p>
