| 摘要 |
PURPOSE: A contact hole formation method of a nonsensitive polyimide resin insulation layer is provided to prevent the disconnection of an upper metal interconnection by improving a contact hole pattern of the nonsensitive polyimide resin insulation layer. CONSTITUTION: A nitride layer(20), a lower metal interconnection(30) and a nonsensitive polyimide resin insulation layer(40) are sequentially formed on a semiconductor substrate(10). A positive photoresist pattern(50) is formed on the nonsensitive polyimide resin insulation layer(40) in order to form a contact hole for connecting the lower metal interconnection(30) with an upper metal interconnection. The nonsensitive polyimide resin insulation layer(40) is etched by carrying out wet etching using the positive photoresist pattern(50) as a mask. At this time, the lower metal interconnection(30) is unexposed and excessive undercut is prevented. Then, the lower metal interconnection(30) is exposed by a dry etching process.
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