| 发明名称 |
Method of manufacturing semiconductor device having insulating film |
| 摘要 |
There is obtained a method of manufacturing a semiconductor device capable of preventing deterioration in electrical characteristic thereof. The method includes a step of forming the step section on the main surface of the semiconductor substrate and a step of forming the oxide film on the main surface of the semiconductor substrate using an active oxygen.
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| 申请公布号 |
US2003003772(A1) |
申请公布日期 |
2003.01.02 |
| 申请号 |
US20020178558 |
申请日期 |
2002.06.25 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIBI YASUHIRO;SHIMIZU SATOSHI;TSUJI NAOKI |
| 分类号 |
H01L21/316;H01L21/28;H01L21/76;H01L21/762;H01L21/8247;H01L27/115;H01L29/10;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/316 |
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