发明名称 Address transition detecting circuit
摘要 The present invention relates to an address transition detecting circuit. The present invention has a control means for control charge/discharge of a given portion of the address transition detecting circuit in order to remove a noise of an address transition detection signal generated by a glitch signal included in a given signal applied to an input terminal of an address transition detecting circuit and also has a noise removing circuit for removing the noise included in the address transition detection signal in the output unit of the address transition detecting circuit. Therefore, the present invention can prevent generation of an unnecessary address transition detection signal pulse upon generation of a glitch and can thus stably drives semiconductor chips even at a high power supply voltage.
申请公布号 US2003002383(A1) 申请公布日期 2003.01.02
申请号 US20010005800 申请日期 2001.12.07
申请人 HYNIX SEMICONDUCTOR INC. 发明人 SIN TAE SEUNG
分类号 G11C11/41;G11C8/18;G11C11/407;H03K5/1252;(IPC1-7):G11C5/00 主分类号 G11C11/41
代理机构 代理人
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