发明名称 |
Surface-type light amplifier device and method of manufacture thereof |
摘要 |
A surface-type light amplifier device has an active layer (13) of a light amplification section (11) sandwiched between an n-type semiconductor cladding layer (12) that is an n-type semiconductor layer and a p-type semiconductor multilayer reflecting mirror (14). The light amplification section is attached to a transparent substrate (21) on the side of the n-type semiconductor cladding layer. A plurality of divided electrodes (16) form electrical continuity relative to the p-type semiconductor multilayer reflecting mirror via a p-type cap layer (15) provided on the reflecting mirror. An electrode (18) forming electrical continuity relative to the n-type semiconductor cladding layer is connected to a wiring conductor (20) provided on the surface of the transparent substrate. The device enables amplification of a single, uniform, large-diameter light beam and oscillation of a laser.
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申请公布号 |
US2003002146(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20020226297 |
申请日期 |
2002.08.23 |
申请人 |
JAPAN AS REPRESENTED BY SECRETARY OF AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
SHIMIZU MITSUAKI |
分类号 |
H01S5/02;H01S5/028;H01S5/042;H01S5/183;H01S5/50;(IPC1-7):H01S5/00;H01S3/00;H01S3/08 |
主分类号 |
H01S5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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