发明名称 Method for forming coaxial silicon interconnects
摘要 An interconnect apparatus for testing bare semiconductor dice comprises raised contact members on a semiconductive substrate. The contact members are covered with an insulation layer and a conductive cap connected by a conductive trace to a testing circuit. The trace is covered with coaxial layers of a silicon-containing insulation and a metal for shielding the trace from "crosstalk" and other interference. An apparatus for simultaneous testing of multiple dies on a wafer has thermal expansion characteristics matching those of the semiconductor die or wafer and provides clean signals.
申请公布号 US2003001603(A1) 申请公布日期 2003.01.02
申请号 US20020219842 申请日期 2002.08.14
申请人 AKRAM SALMAN;HEMBREE DAVID R.;WOOD ALAN G. 发明人 AKRAM SALMAN;HEMBREE DAVID R.;WOOD ALAN G.
分类号 G01R1/04;G01R31/28;(IPC1-7):G01R31/02 主分类号 G01R1/04
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