| 发明名称 |
PECVD of optical quality silica films |
| 摘要 |
<p>A method of depositing an optical quality silica film on a substrate is described wherein the film is formed on the substrate by plasma enhanced chemical vapor deposition (PECVD) in the presence of reactive gases while controlling the total pressure of the gases. The as-deposited film is then subjected to a low temperature treatment between 400° to 1200°C to minimize the presence of contaminant compounds in the film.</p> |
| 申请公布号 |
EP1270762(A1) |
申请公布日期 |
2003.01.02 |
| 申请号 |
EP20020252664 |
申请日期 |
2002.04.15 |
| 申请人 |
DALSA SEMICONDUCTOR INC. |
发明人 |
OUELLET, LUC;GRONDIN, MANUEL;LACHANCE, JONATHAN;BLAIN, STEPHANE |
| 分类号 |
G02B6/13;C03B8/04;C23C16/40;C23C16/44;C23C16/56;(IPC1-7):C23C16/40;C23C16/50 |
主分类号 |
G02B6/13 |
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