发明名称 Capacitor, semiconductor memory device, and method for manufacturing the same
摘要 <p>A capacitor includes: a lower electrode; a capacitor insulating film made of a metal oxide and formed on the lower electrode; an upper electrode formed on the capacitor insulating film; and a buried insulating film surrounding the lower electrode. The lower electrode includes a conductive barrier layer that prevents diffusion of oxygen, and an insulating barrier layer that prevents diffusion of hydrogen is formed so as to be in contact with at least a side surface of the conductive barrier layer in a side surface of the lower electrode.</p>
申请公布号 EP1271624(A2) 申请公布日期 2003.01.02
申请号 EP20020014103 申请日期 2002.06.24
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD 发明人 NAGANO, YOSHIHISA;FUJII, EIJI
分类号 H01L21/02;H01L21/8246;H01L27/115;(IPC1-7):H01L21/02 主分类号 H01L21/02
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