Memory clearing involves applying volume voltage, higher gate voltage to conductive electrode, signals with voltages higher than gate voltage to diffusion regions for clearing time.

摘要

The method involves applying a voltage to a volume region (100) for a given clearing time, applying a higher gate voltage to a conductive electrode (240) for the clearing time, applying a first signal with voltage higher than the gate voltage to a first discontinuity diffusion region (120) for the clearing time and applying a second signal with a different voltage higher than the gate voltage to a second diffusion region (140) for the clearing time.