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发明名称
DMOS transistor cell having a trench gate electrode, and corresponding DMOS transistor and method of making the same
摘要
申请公布号
EP1269549(A2)
申请公布日期
2003.01.02
申请号
EP20010925129
申请日期
2001.03.16
申请人
GENERAL SEMICONDUCTOR, INC.
发明人
HSHIEH, FWU-IUAN;SO, KOON, CHONG;TSUI, YAN, MAN
分类号
H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L29/78;H01L21/336
主分类号
H01L29/423
代理机构
代理人
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地址
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