发明名称 |
Electrostatic discharge protection in double diffused MOS transistors |
摘要 |
The specification describes a DMOS transistor that is fully integrated with an electrostatic protection diode (ESD). The ESD diode is isolated from the DMOS device by a trench. The trench is metallized to tie the guard ring of the ESD to the substrate thereby increasing the current handling capabilities of the ESD. The trench also provides a convenient buried contact to the RF ground.
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申请公布号 |
US2003001199(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20010896669 |
申请日期 |
2001.06.29 |
申请人 |
SHIBIB MUHAMMED AYMAN |
发明人 |
SHIBIB MUHAMMED AYMAN |
分类号 |
H01L21/336;H01L21/8234;H01L27/02;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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