首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit einem Feldeffekttransistor, einem Kondensator und einem Widerstand.
摘要
申请公布号
DE69528107(T2)
申请公布日期
2003.01.02
申请号
DE19956028107T
申请日期
1995.04.21
申请人
NEC CORP., TOKIO/TOKYO
发明人
YOSHIMORI, MASANORI
分类号
H01L27/04;H01L21/822;H01L21/8234;H01L27/06;(IPC1-7):H01L27/06
主分类号
H01L27/04
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Porous silica microspheres having silanol-enriched and silanized surfaces
OIL PUMP GEAR LUBRICATING DEVICE OF TWO-CYCLE VERTICAL ENGINE
Process for reducing a refining catalyst before use
Fluid sampler
VALVE TIMING CONTROLLER OF INTERNAL COMBUSTION ENGINE
Transparent polymer material
Laser calibration
Mechanism for automatically fixing a slide plate of a system for lifting a motor vehicle for repair thereof
IN-MOLD MOLDING METHOD
Multi-cell gravity filter with central control chamber
TWO-CYCLE ENGINE
Process of aligning and realigning liquid crystal media
Method for casting friable asbestos-containing material into a non-friable mass
Support post system
Magnetic card
Trench gate VCMOS method of manufacture
A Process for modulating the quantity of gold diffused into a silicon substrate
Microcellular synthetic paintbrush bristles
IMAGE FORMING DEVICE
CONTROL METHOD FOR ROBOT WITH MULTI-DEGREE OF FREEDOM
