Method for cleaning and preconditioning a chemical vapor deposition chamber dome

摘要

The present invention relates generally to the field of semiconductor device manufacturing, and more specifically to a method for cleaning and preconditioning a dome in a chemical vapor deposition system. During cleaning, the direction of flow of cooling water through an induction coil in the dome is reversed. During preconditioning, the direction of cooling water flow is preferably reversed again, such that it is the same direction as during deposition. The preconditioning portion of the method comprises introducing a hydrogen gas into the CVD chamber, and then introducing a mixture of hydrogen gas and nitrogen gas into the chamber.