发明名称 |
Electrically programmable resistance cross point memory |
摘要 |
Resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises an active layer of perovskite material interposed between upper electrodes and lower electrodes. A bit region located within the active layer at the cross point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. Memory circuits are provided to aid in the programming and read out of the bit region.
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申请公布号 |
US2003003674(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20010894922 |
申请日期 |
2001.06.28 |
申请人 |
HSU SHENG TENG;ZHUANG WEI-WEI |
发明人 |
HSU SHENG TENG;ZHUANG WEI-WEI |
分类号 |
H01L27/115;G11C11/15;G11C11/56;G11C13/00;H01L21/8246;H01L27/10;H01L27/105;H01L27/24;H01L43/08;(IPC1-7):G11C17/00 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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