发明名称 |
Method for fabricating semiconductor device |
摘要 |
The present invention discloses a method for fabricating a semiconductor device. A stabilized junction is formed by simultaneously adjusting diffusion in a channel direction and a depth direction by restricting transient enhanced diffusion and oxidation enhanced diffusion, and reducing a short channel effect and diffusion in the depth direction, by positioning a nitrified oxide film between a gate electrode and a nitride film spacer formed at side walls of the gate electrode in order to remove defects generated due to stress differences between the gate electrode and the nitride film spacer in a formation process of a PMOS transistor. It is thus possible to form a device having an ultra shallow junction which is not influenced by miniaturization.
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申请公布号 |
US2003003670(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20020139329 |
申请日期 |
2002.05.07 |
申请人 |
KWAK NOH-YEAL;PARK SANG WOOK |
发明人 |
KWAK NOH-YEAL;PARK SANG WOOK |
分类号 |
H01L21/28;H01L21/223;H01L21/265;H01L29/49;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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