发明名称 |
Time domain sensing technique and system architecture for image sensor |
摘要 |
A photodiode sensor (25) has a photodiode (30) with an associated capacitance (34), which may be a parasitic capacitance of the photodiode (30). A switch (36) is provided for charging the capacitance (34) to a predetermined reset voltage (Vreset) such that when light impinges upon the photodiode (30), the voltage on the capacitance (34) discharges in a time proportional to an intensity of the light. A circuit (42) is also provided for measuring the time for the capacitance (34) to discharge to a predetermined threshold value (33), which may be a function of time. The voltage on the output (38) of the comparator (28) may be sampled, with the sampling period also being variable as a function of time. The image may be reconstructed from time data indicating the relative times that discharge voltage of the pixels in an array cross the reference voltage (33).
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申请公布号 |
US2003001080(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20020064132 |
申请日期 |
2002.06.13 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KUMMARAGUNTLA RAVI K.;CHEN ZHILIANG JULIAN;HARRIS JOHN G. |
分类号 |
G01J1/44;H01L27/146;H04N5/353;H04N5/374;(IPC1-7):H01L31/00 |
主分类号 |
G01J1/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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