发明名称 Time domain sensing technique and system architecture for image sensor
摘要 A photodiode sensor (25) has a photodiode (30) with an associated capacitance (34), which may be a parasitic capacitance of the photodiode (30). A switch (36) is provided for charging the capacitance (34) to a predetermined reset voltage (Vreset) such that when light impinges upon the photodiode (30), the voltage on the capacitance (34) discharges in a time proportional to an intensity of the light. A circuit (42) is also provided for measuring the time for the capacitance (34) to discharge to a predetermined threshold value (33), which may be a function of time. The voltage on the output (38) of the comparator (28) may be sampled, with the sampling period also being variable as a function of time. The image may be reconstructed from time data indicating the relative times that discharge voltage of the pixels in an array cross the reference voltage (33).
申请公布号 US2003001080(A1) 申请公布日期 2003.01.02
申请号 US20020064132 申请日期 2002.06.13
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 KUMMARAGUNTLA RAVI K.;CHEN ZHILIANG JULIAN;HARRIS JOHN G.
分类号 G01J1/44;H01L27/146;H04N5/353;H04N5/374;(IPC1-7):H01L31/00 主分类号 G01J1/44
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