发明名称 |
Thin film multi-layer high Q transformer formed in a semiconductor substrate |
摘要 |
A thin-film multi-layer high Q transformer. To form an outer transformer winding a plurality of parallel first level metal runners are formed in a first insulating layer overlying the semiconductor substrate. A plurality of vertical conductive vias are formed in third and fourth insulating layers and in electrical communication with each end of the first level metal runners. A fourth insulating layer is disposed over the third insulating layer and additional vertical conductive vias and a fourth level metal runner are formed therein. Thus, the fourth level metal runners and the intervening vertical conductive vias connect each of the first level metal runners to form a continuously conductive structure having a generally helical shape. The inner winding of the transformer is similarly formed. A plurality of parallel second level metal runners are formed within the second insulating layer and a plurality of conductive vias and third level metal runners are formed within the third insulating layer to interconnect the plurality of second level metal runners to form a continuously conductive structure having a generally helical shape and disposed at least partially within the outer transformer winding.
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申请公布号 |
US2003003603(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20010972481 |
申请日期 |
2001.10.05 |
申请人 |
CHAUDHRY SAMIR;LAYMAN PAUL ARTHUR;THOMSON J. ROSS;LARADJI MOHAMED;GRIGLIONE MICHELLE D. |
发明人 |
CHAUDHRY SAMIR;LAYMAN PAUL ARTHUR;THOMSON J. ROSS;LARADJI MOHAMED;GRIGLIONE MICHELLE D. |
分类号 |
H01L23/52;H01L21/02;H01L21/3205;H01L21/822;H01L23/522;H01L27/02;H01L27/04;(IPC1-7):H01L21/00;H01L21/44 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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