发明名称 |
Method for manufacturing semiconductor memory device by using photoresist pattern exposed with ArF laser beam |
摘要 |
A method for manufacturing a semiconductor memory device includes the steps of forming a mask layer on a target layer to be etched, coating a photoresist on the mask layer, exposing the photoresist by using a light resource whose wavelength is of about 157 nm to 193 nm, forming a photoresist pattern by developing the photoresist, forming a mask pattern by selectively etching the mask layer with an etching gas except of fluorine-based gases by using the photoresist pattern as an etching mask; and selectively etching the target layer by using the mask pattern as an etching mask.
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申请公布号 |
US2003003659(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20020175574 |
申请日期 |
2002.06.19 |
申请人 |
LEE SUNG-KWON;KIM SANG-IK;SUH WEON-JOON;LEE MIN-SEOK;YOON KUK-HAN |
发明人 |
LEE SUNG-KWON;KIM SANG-IK;SUH WEON-JOON;LEE MIN-SEOK;YOON KUK-HAN |
分类号 |
G03F7/11;G03F7/20;G03F7/38;G03F7/40;H01L21/027;H01L21/28;H01L21/3065;H01L21/311;H01L21/60;H01L21/768;(IPC1-7):H01L21/336 |
主分类号 |
G03F7/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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