Method of fabricating capacitor having hafnium oxide

摘要

Disclosed herein is a method of fabricating a capacitor. The method includes the steps of: forming a Ti1-x HfxN layer on a substrate, wherein x is in a range from 0 to 0.5; forming an electrode layer on the Ti1-xHfxN layer; and forming a HfO2 layer on an interface between the electrode layer and the Ti1-xHfxN layer by performing a thermal treatment in an oxygen gas-containing atmosphere.