发明名称 Method for forming low dielectric constant insulating layer with foamed structure
摘要 A method is used to form an insulating layer with foamed structure. About the method, a gel layer over a substrate, where the gel layer includes several types of solution, an unextractable material, and a solvent. The substrate is then put in a closed pressure chamber. The closed pressure chamber is heated to a subcritical temperature with respect to the material which is included in the gel layer but to be extracted out. In this situation, liquid and the material to be extracted all turn to a vapor phase due to the pressure in the pressure chamber has reached the subcritical pressure, whereby materials are extracted. Under this temperature, the vapor is flushed away, and a noble gas is flushed into the pressure chamber for cleaning. The substrate with the gel layer is cooled down to the environmental temperature. Then the substrate is taken out from the pressure chamber.
申请公布号 US2003003769(A1) 申请公布日期 2003.01.02
申请号 US20010895550 申请日期 2001.06.28
申请人 YANG TAHORNG 发明人 YANG TAHORNG
分类号 H01L21/316;(IPC1-7):H01L21/31;H01L21/469 主分类号 H01L21/316
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