发明名称 Control device for semiconductor memory device and method of controlling semiconductor memory device
摘要 As a result of comparing an address set in an area setting register and an address shown by address information of an access request signal, if the address set in the area setting register matches the address shown by the address information, a command with auto precharge is outputted to an FCRAM, and if not, an ordinary command is outputted to the FCRAM. Thus, when an area, in which addresses to be accessed are random in many cases, is accessed, the command with auto precharge is outputted to allow the FCRAM to perform a precharge operation automatically, and when an area, in which addresses to be accessed are sequential in many cases, is accessed, the ordinary command is outputted to allow a read operation or a write operation to be performed continuously, whereby data transfer efficiency can be increased.
申请公布号 US2003005216(A1) 申请公布日期 2003.01.02
申请号 US20020090826 申请日期 2002.03.06
申请人 FUJITSU LIMITED 发明人 SARUWATARI TOSHIAKI;FUJITA ATSUSHI
分类号 G06F12/00;G06F12/02;G06F13/16;G11C7/12;G11C11/407;G11C11/4076;G11C11/409;(IPC1-7):G06F12/00 主分类号 G06F12/00
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