摘要 |
A semiconductor memory device capable of shortening the command supply interval during random access and thus improving the transfer rate of input/output data. In response to a write command, identical data is written into multiple memory banks having identical addresses assigned thereto. At this time, a bank selection circuit sequentially selects the memory banks to initiate write operations in a staggered manner. Since the write operation can be started before all memory banks become idle, the interval between the supply of read command and the supply of write command can be shortened. Consequently, the number of commands supplied per given time can be increased, and since data signal can be input/output more frequently than in conventional devices, the data transfer rate (data bus occupancy) improves. As a result, the performance of a system to which the semiconductor memory device is mounted can be enhanced.
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