| 发明名称 |
Method of making a semiconductor device with alloy film between barrier metal and interconnect |
| 摘要 |
Between a copper film 5a and a tantalum-based barrier metal film 2b, there is set an alloy layer 10 made through the reaction of the material of the barrier metal film and copper.
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| 申请公布号 |
US2003003727(A1) |
申请公布日期 |
2003.01.02 |
| 申请号 |
US20020212739 |
申请日期 |
2002.08.07 |
| 申请人 |
NEC CORPORATION |
发明人 |
MATSUBARA YOSHIHISA |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/3205 |
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代理人 |
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| 主权项 |
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