| 发明名称 |
Thin titanium nitride layers used in conjunction with tungsten |
| 摘要 |
Titanium nitride layers a less than 30 nm thickness are formed by physical vapor deposition and used as barrier layers for tungsten deposition. The titanium nitride layers are annealed in the presence of nitrogen or a nitrogen compound.
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| 申请公布号 |
US2003001265(A1) |
申请公布日期 |
2003.01.02 |
| 申请号 |
US20010881607 |
申请日期 |
2001.06.13 |
| 申请人 |
FORTIN VINCENT |
发明人 |
FORTIN VINCENT |
| 分类号 |
H01L21/285;H01L21/768;H01L23/532;(IPC1-7):H01L23/52;H01L23/48 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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