发明名称 |
Modified vertical MOSFET and methods of formation thereof |
摘要 |
The vertical MOSFET structure used in forming dynamic random access memory comprises a gate stack structure comprising one or more silicon nitride spacers; a vertical gate polysilicon region disposed in an array trench, wherein the vertical gate polysilicon region comprises one or more silicon nitride spacers; a bitline diffusion region; a shallow trench isolation region bordering the array trench; and wherein the gate stack structure is disposed on the vertical gate polysilicon region such that the silicon nitride spacers of the gate stack structure and vertical gate polysilicon region form a borderless contact with both the bitline diffusion region and shallow trench isolation region. The vertical gate polysilicon is isolated from both the bitline diffusion and shallow trench isolation region by the nitride spacer, which provides reduced bitline capacitance and reduced incidence of bitline diffusion to vertical gate shorts.
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申请公布号 |
US2003001200(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20010896741 |
申请日期 |
2001.06.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIVAKARUNI RAMACHANDRA;DEV PRAKASH C.;MALIK RAJEEV;NESBIT LARRY |
分类号 |
H01L21/8242;(IPC1-7):H01L21/336;H01L29/76;H01L29/94 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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