发明名称 |
Hybrid integrated circuit device and manufacturing method thereof |
摘要 |
In a manufacturing method of a hybrid integrated circuit device of the invention, transfer molding is carried put by positioning a curved surface formed in a back surface of the substrate on a lower mold die side and a burr formed in a main surface of the substrate on an upper mold die side. This utilizes the curved surface to inject thermosetting resin in an arrow direction to pour the thermosetting resin through a below of the substrate. There are no broken fragments of burr in a thermosetting resin at the below of the substrate. As a result, a required minimum resin thickness is secured at the below of the substrate, thus realizing a hybrid integrated circuit device having a high voltage resistance, an excellent heat dissipation property and a high product quality. |
申请公布号 |
US2003003629(A1) |
申请公布日期 |
2003.01.02 |
申请号 |
US20020183758 |
申请日期 |
2002.06.27 |
申请人 |
KOIKE YASUHIRO;SAITO HIDEFUMI;OKAWA KATSUMI;IIMURA JUNICHI |
发明人 |
KOIKE YASUHIRO;SAITO HIDEFUMI;OKAWA KATSUMI;IIMURA JUNICHI |
分类号 |
H01L21/56;H01L23/433;H01L23/495;H05K1/05;H05K3/00;H05K3/28;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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