发明名称 |
Method for manufacturing a nitride compound based semiconductor device |
摘要 |
<p>A method for manufacturing a GaN-based semiconductor device in which an ohmic contact can be provided between the semiconductor layer and the electrode material. In a method for manufacturing wherein an n-GaN layer, an emissive layer, a p-GaN layer are formed on a substrate in that order; etching is performed to expose a portion of the n-GaN layer; and a negative electrode is formed on the n-GaN layer, the etching is performed in two sub-steps, an etching step using BCl3 gas and an etching step using Cl2 gas. The surface of the n-GaN layer is exposed in the first sub-step and the B (boron) contamination layer is removed in the second sub-step. <IMAGE></p> |
申请公布号 |
EP1271630(A2) |
申请公布日期 |
2003.01.02 |
申请号 |
EP20020100292 |
申请日期 |
2002.03.25 |
申请人 |
SAKAI, SHIRO;NITRIDE SEMICONDUCTORS CO., LTD. |
发明人 |
SAKAI, SHIRO;LACROIX, YVES |
分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L29/20;H01L29/45;H01S5/323;H01S5/343;(IPC1-7):H01L21/285;H01L33/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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