发明名称 TFT SUBSTRATE AND METHOD FOR FABRICATING THE SAME
摘要 PURPOSE: A TFT substrate and a method for fabricating the same are provided to simplify a fabrication process of the TFT substrate by using an organic insulating layer print method. CONSTITUTION: A gate wire(22,24,26) including a gate line(22), a gate pad(24), and a gate electrode(26) and a common wire(27,28) including a common electrode line(27) and a plurality of common electrodes(28) are formed on an insulating substrate. A gate insulating layer is covered on the gate line(22), the gate electrode(26), and the common wire(27,28). A semiconductor pattern(42) is formed on the gate insulating layer. A plurality of resistant contact patterns are formed on the semiconductor pattern(42). A data wire is formed with a data line(62), a data pad(64), a source electrode(65), a drain electrode(66), a pixel electrode line(67), and a pixel electrode(68). A TFT is formed with the gate electrode(26), the source electrode(65), the drain electrode(66), the source electrode(65), and the semiconductor pattern(42) between the drain electrodes(66).
申请公布号 KR20020096613(A) 申请公布日期 2002.12.31
申请号 KR20010035303 申请日期 2001.06.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYUN, JAE SEONG;CHA, JONG HWAN;JUNG, BAE HYEON;LEE, GEON JONG;LIM, HYEON SU
分类号 G02F1/1368;G02F1/1343;G02F1/1362;H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L29/786 主分类号 G02F1/1368
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