摘要 |
PURPOSE: A TFT substrate and a method for fabricating the same are provided to simplify a fabrication process of the TFT substrate by using an organic insulating layer print method. CONSTITUTION: A gate wire(22,24,26) including a gate line(22), a gate pad(24), and a gate electrode(26) and a common wire(27,28) including a common electrode line(27) and a plurality of common electrodes(28) are formed on an insulating substrate. A gate insulating layer is covered on the gate line(22), the gate electrode(26), and the common wire(27,28). A semiconductor pattern(42) is formed on the gate insulating layer. A plurality of resistant contact patterns are formed on the semiconductor pattern(42). A data wire is formed with a data line(62), a data pad(64), a source electrode(65), a drain electrode(66), a pixel electrode line(67), and a pixel electrode(68). A TFT is formed with the gate electrode(26), the source electrode(65), the drain electrode(66), the source electrode(65), and the semiconductor pattern(42) between the drain electrodes(66).
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申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BYUN, JAE SEONG;CHA, JONG HWAN;JUNG, BAE HYEON;LEE, GEON JONG;LIM, HYEON SU |