NON-VOLATILE MEMORY DEVICE HAVING FLOATING GATE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A non-volatile memory device having a floating gate and a method for fabricating the same are provided to improve a coupling coefficient by increasing a surface area of the floating gate. CONSTITUTION: An active region(150) and a field region are divided by a field oxide layer(112). The active region(150) of a semiconductor substrate(100) is extended to the first direction in parallel to the field region. A plurality of word lines are arrayed on the active region(150). The word lines are extended to the second direction perpendicular to the active region(150). A memory cell transistor is formed with a stacked gate structure having a plurality of floating gates(104,120) and a control gate layer(126). The floating gates(104,120) are formed by inserting a tunnel oxide layer on the substrate(100). The gate control layer(126) is formed by inserting a dielectric layer(124) on the floating gates(104,120).