| 摘要 |
PURPOSE: A fabrication method of a flash memory device is provided to improve an operation speed and reliability by forming a spacer at both sidewalls of a control gate. CONSTITUTION: A gate insulating layer(101) is formed on a semiconductor substrate(100) having a cell and a peripheral region. A first conductive layer and a dielectric film(103) are selectively formed on the cell region. A control gate(106) is selectively formed on the dielectric film(103) and the peripheral region. An anti-reflective layer(107) is formed on the control gate(106). A spacer(110a) is formed at both sidewalls of the control gate(106) by depositing a first insulating layer and selectively etching the first insulating layer using mixed gases of CF4/CHF3 and CF4/CHF3/Ar.
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