| 摘要 |
PURPOSE: A method for manufacturing semiconductor devices using damascene structure is provided to improve reliability by forming a lower polymerization in a contact hole. CONSTITUTION: After forming a first insulating layer(103) on a semiconductor substrate(100) having a transistor, a first contact hole is formed to expose the substrate. A first conductive layer(105) is filled into the first contact hole. After depositing a stopping layer(106) having thickness of 500-800Å on the resultant structure, a second insulating layer(107) having thickness of 2000-4000Å is deposited on the stopping layer(106). A second contact hole is formed to expose the first conductive layer(105) by selectively etching the second insulating layer(107) and the stopping layer(106). A second conductive layer(110) is filled into the second contact hole.
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