发明名称 Method of horizontally growing carbon nanotubes
摘要 Carbon nanotubes are horizontally grown by forming a predetermined catalyst pattern on a first substrate. A vertical growth preventing layer is formed on the first substrate. Apertures (16) are formed on the vertical growth preventing layer and the first substrate to expose the catalyst pattern. Carbon nanotubes are synthesized at exposed surfaces of the catalyst pattern.
申请公布号 GB2364933(B) 申请公布日期 2002.12.31
申请号 GB20010017520 申请日期 2001.07.18
申请人 * LG ELECTRONICS INC. 发明人 JIN KOOG * SHIN;KYU TAE * KIM;MIN JAE * JUNG;SANG SOO * YOON;YOUNG SOO * HAN;JAE EUN * LEE
分类号 B82B1/00;B01J23/74;B82B3/00;C01B31/02;C23C16/26;G11C13/02;H01L21/335;H01L27/22;H01L27/28;H01L29/06;H01L29/15;H01L29/16;H01L29/66;H01L29/76;H01L29/80;H01L31/119;H01L43/08;H01L51/00;H01L51/05;H01L51/30;H01L51/40;(IPC1-7):B01J23/74;H01L29/12 主分类号 B82B1/00
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