| 摘要 |
PURPOSE: A method for forming a dielectric film with a low dielectric constant (k) is provided, to lower the dielectric constant of the dielectric film to 2.6 or less. CONSTITUTION: The method comprises the step of reacting a polyhedral oligomeric silsesquioxane compound with a crosslinking agent in the chemical evaporation deposition process. Preferably the polyhedral oligomeric silsesquioxane compound is represented by SinO1.5n(R1)i(R2)j(R3)k, wherein n is the sum of i, j and k and are about 6 to about 20; and R1, R2 and R3 are an organic functional group, a silicon functional group or a combination of the two groups. Preferably the crosslinking agent is a linear or cyclic siloxane, or the organic peroxide. Preferably the polyhedral oligomeric silsesquioxane compound is dissolved into a solvent before it is added to the chemical evaporation deposition system.
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